The Ohmi Best Paper Award should be awarded every year to the authors of a paper determined to be the best overall by a popular vote of all TPC members in attendance at the conference. The process should be administered by the TPC Chair with a goal of announcing the winner to the TPC members during the TPC dinner or equivalent gatherings. The best paper award should be presented by this TPC Chair at the opening session of the following year’s ISPSD.
Yasuhiro Ebihara, Aiko Ichimura, Shuhei Mitani, Masato Noborio,Yuichi Takeuchi, Shoji Mizuno, Toshimasa Yamamoto, Kazuhiro Tsuruta
Denso Corporation, Japan
Abstract: Deep-P encapsulated 4H-SiC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated an ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switching characteristics were obtained by the balanced JFET resistance and the gate-drain capacitance.
Yasuhiro Ebihara received his M.S. degree from University of Tsukuba in 2012. In 2012, he joined DENSO CORPORATION in Aichi, Japan, where he has been engaged in the research and development of SiC power devices.
Aiko Ichimura received her B.S. and M.S. degrees from Kwansei Gakuin University in 2012 and 2014, respectively. In 2014, she joined DENSO CORPORATION in Aichi, Japan, where she has been engaged in the research and development of SiC power devices.
Shuhei Mitani received his M.E. from Kyoto Institute of Technology in 2006. Since 2004, He has been developing total FEOL processes for SiC power devices. He joined DENSO CORPORATION in 2013. His current main interest is the development of miniaturization technology for SiC trench MOSFET.
Masato Noborio received his B.E., M.E., and Ph.D. degrees, based on his work on SiC MOS interface characterization, device physics, and lateral power devices from Kyoto University, Kyoto, Japan, in 2004, 2006, and 2009, respectively. He joined DENSO CORPORATION, Aichi, Japan, in April 2009. His current research interests include the development of SiC power devices.
Yuichi Takeuchi received his B.S. and M.S. degrees in 1988 and 1990 from Nagoya University, Nagoya, Japan. He joined DENSO CORPORATION in 1990. He was engaged in development of Si power devices. From 1992, he has been engaged in the research and development of SiC power devices.
Shoji Mizuno received his B.E. and M.E. degrees in 1985 and 1987 from Nagoya University, Nagoya, Japan. He joined DENSO CORPORATION in 1987. He was engaged in development of semiconductor devices, especially SOI BCD devices and Si power devices for automotive applications. From 2010, he has been engaged in the research and development of SiC power devices.
Toshimasa Yamamoto received his B.E. and M.E. degrees in 1986 and 1988 from Osaka University, Osaka, Japan. He joined DENSO CORPORATION in 1988. He was engaged in the research and development of MEMS devices like accelerometers and an air flow meters. From 2007, he has been engaged in the research and development of SiC power devices.
Kazuhiro Tsuruta received his B.E. degree in electrical engineering from Osaka University in 1987. He joined DENSO CORPORATION in 1987. He was engaged in the research and development of Si devices. From 2004, he has been engaged in the research and development of SiC power devices & modules.
The Charitat Award should be awarded each year to a young researcher (age less than 30 at the time of the conference) who is both first author and presenter of a paper determined to be best overall among all eligible papers. Paper eligibility should be indicated during the abstract submission process. The Charitat award should be administered by the TPC each year and presented during the closing session of the conference. Traditionally, the Charitat Award has been decided by vote in a committee comprising a subset of the TPC and including fair representation from all of the regions.
Shu Yang, Shaowen Han, Rui Li, Kuang Sheng
Zhejiang University, China
Abstract: In this work, we developed 1 kV/1.3 mΩ·cm2 vertical GaN Schottky barrier diodes (SBDs) on bulk GaN substrate. The vertical GaN SBDs exhibit a nearly ideal Schottky contact withan ideality factor of 1.04, a forward current density of 2000 A/cm2, and a high current swing over 13 orders of magnitude. By virtue of a planarnitridation-based termination technique, the excess leakage current at the junction edge can be effectively suppressed and an enhanced breakdown voltageof ~1 kV is realized in the vertical SBDs. In addition to the fast reverse recovery characteristics, the vertical GaN-on-GaN SBDs also deliver acurrent-collapse-free performance with no dynamic ON-resistance degradation at~500 ns after switching from a high-voltage OFF-state.
Shu Yang received her B.S. degree in Microelectronics from Fudan University, China, and her Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology (HKUST) with SENG PhD Research Excellence Award. She was a visiting assistant professor at HKUST and a postdoctoral research associate at the University of Cambridge. She is currently a faculty member at the College of Electrical Engineering, Zhejiang University, China. Her research interests include characterization, fabrication and application-relevant study of GaN-based power devices.
Jingshu Yu, Weijia Zhang, Andrew Shorten, Rophina Li, Wai Tung Ng
University of Toronto, Canada
Abstract: In this paper, anintegrated smart gate driver IC with segmented output stage topology, programmable sense-FET, current sensing circuits and an on-chip stacked-based CPU for flexible digital control is presented. This IC is fabricated using TSMC’s 0.18 μm BCD GEN2 process for driving a d-mode GaN power HEMT in cascode configuration. Using a segmentation technique, this IC can dynamically adjust the gate driving strength during switching transition to achieve slope controland EMI reduction. Programmable sense-FET and current sensing circuit monitorthe load current for peak-current regulation. The embedded CPU can update alldigital configuration bits on-the-fly. In dynamic driving mode, current spikeat turn-on transition is reduced by 83% without sacrificing the switching speed. Current sensing circuit can detect peak current value and response within 5 ns. The pre-stored driving patterns can be loaded to the driving circuit in 1 μs under active driving mode.
Jingshu Yu received her B.Eng. degree in Electrical Engineering from Zhejiang University, Hangzhou, China, in 2011. She then joined the University of Toronto, Toronto, Canada, where she received her M.A.Sc. degree in 2014 under the supervision of Prof. Wai Tung Ng. She is currently working toward her Ph.D. degree with the Smart Power Integration and Semiconductor Devices Research Group at the same university. Her research interests include smart gate driving techniques, EMI reduction and power stage design for GaN power applications.